Menyekanisha ubwoko butandukanye bwa selile

1. ^{Intangiriro kuri selile}

(1) Incamake:Ingirabuzimafatizo nizo ngingo zingenzi zaamashanyarazi yamashanyarazi, n'inzira zabo za tekiniki hamwe nurwego rwibikorwa bigira ingaruka kuburyo butaziguye kubyara ingufu nubuzima bwa serivisi ya moderi yifoto.Utugingo ngengabuzima twa Photovoltaque duherereye hagati yumurongo winganda zifotora.Nibipapuro bito byoroheje bishobora guhindura ingufu zumucyo wizuba mumashanyarazi yabonetse mugutunganya waferi imwe / poly kristaline silicon.

Ihame ryaamashanyarazi yamashanyaraziiva mu mafoto ya elegitoroniki ya semiconductor.Binyuze mu kumurika, itandukaniro rishobora kubaho hagati yibice bitandukanye byigice kimwe cya semiconductor cyangwa semiconductor hamwe nicyuma.Ihindurwa kuva kuri fotone (urumuri rwumucyo) muri electroni ningufu zoroheje mumashanyarazi kugirango ikore voltage.n'ibikorwa bigezweho.Wafer ya silicon yakozwe mumasoko yo hejuru ntishobora kuyobora amashanyarazi, kandi ingirabuzimafatizo zituruka kumirasire y'izuba zitunganya ingufu z'amashanyarazi.

(2) Ibyiciro:Urebye muburyo bwa substrate, selile zirashobora kugabanywamo ubwoko bubiri:P-selile na selile N-selile.Doping boron muri kristu ya silicon irashobora gukora P-semiconductor;doping fosifore irashobora gukora N-semiconductor.Ibikoresho fatizo bya bateri yo mu bwoko bwa P ni ubwoko bwa P bwa silicon wafer (ikoporowe na boron), naho ibikoresho fatizo bya bateri yo mu bwoko bwa N ni N-silicon wafer (ikozwe na fosifore).P-selile igizwe ahanini na BSF (isanzwe ya aluminiyumu yinyuma yumurima) na PERC (pasitoro ya emitter na selile yinyuma);N-selile selile ubu ni tekinoroji yingenziTOPCon.Bateri yo mu bwoko bwa N itwara amashanyarazi binyuze muri electron, kandi kwitabwaho n’umucyo biterwa na boron-ogisijeni ya atom byombi ni bike, bityo imikorere ya fotoelectric ikaba iri hejuru.

3. Kumenyekanisha bateri ya PERC

.Urebye muburyo bw'imiterere, byombi birasa, kandi bateri ya PERC ifite gusa igice kimwe cyinyuma cya passivation kurenza bateri ya BSF (tekinoroji ya batiri yabanjirije).Ihinduka rya passiyo yinyuma ituma selile ya PERC igabanya umuvuduko wa recombination yubuso bwinyuma mugihe itezimbere urumuri rwinyuma rwinyuma kandi rugahindura imikorere yimikorere ya selile

(2) Amateka yiterambere: Kuva 2015, bateri zo murugo PERC zinjiye murwego rwo gukura byihuse.Muri 2015, ingufu za batiri zo mu gihugu PERC zageze ku mwanya wa mbere ku isi, zingana na 35% by’ubushobozi bwa batiri ya PERC ku isi.Mu mwaka wa 2016, “Photovoltaic Top Runner Programme” yashyizwe mu bikorwa n’ikigo cy’igihugu gishinzwe ingufu zatumye hatangizwa ku mugaragaro umusaruro rusange w’inganda zikora inganda za PERC mu Bushinwa, ku kigereranyo cya 20.5%.2017 ni impinduka ku mugabane w isoko ryaingirabuzimafatizo.Umugabane wisoko ryingirabuzimafatizo zisanzwe watangiye kugabanuka.Umugabane w’isoko rya PERC mu gihugu wiyongereye kugera kuri 15%, kandi umusaruro wacyo wiyongereye kugera kuri 28.9GW;

Kuva muri 2018, bateri za PERC zahindutse isoko rusange ku isoko.Muri 2019, umusaruro mwinshi w'utugari twa PERC uzihuta, hamwe n’umusaruro rusange wa 22.3%, bingana na 50% by’ubushobozi bw’umusaruro, urenga ku mugaragaro BSF kugira ngo ube ikoranabuhanga ry’imikorere y’amafoto y’amashanyarazi.Nk’uko imibare ya CPIA ibigaragaza, mu 2022, umusaruro rusange w’utugari twa PERC uzagera kuri 23.3%, kandi umusaruro uzatanga hejuru ya 80%, kandi umugabane w’isoko uzakomeza kuza ku mwanya wa mbere.

4. Batiri ya TOPCon

(1) Ibisobanuro:Batiri ya TOPCon, ni ukuvuga, tunneling oxide layer passivation selile selile, itegurwa inyuma ya bateri hamwe na ultra-thin tunneling oxide layer hamwe nigice cya polisilicon yoroheje cyane, igizwe hamwe nuburyo bwo guhuza passivation.Muri 2013, byasabwe n'ikigo cya Fraunhofer mu Budage.Ugereranije na selile PERC, imwe nugukoresha n-ubwoko bwa silicon nka substrate.Ugereranije na p-selile silicon selile, n-silicon ifite ubwoko burebure bwabatwara abantu bake, imikorere ihindagurika cyane, numucyo udakomeye.Iya kabiri ni ugutegura passivation (ultra-thin silicon oxide SiO2 na dopi poly silicon thin layer Poly-Si) inyuma kugirango habeho imiterere ya passivation itandukanya rwose akarere ka doped nicyuma, gishobora kurushaho kugabanya inyuma hejuru.Ubwikorezi buke butwara ibishoboka hagati yubuso nicyuma bizamura imikorere ya bateri.